Imago Praecipua Sensoris Currentis Effectus Hall Transductoris Nuclei Divisi

Sensorium Currentis Effectus Hall Transductor Nuclei Divisi

Numerus Producti: MLRH-2147

Currens Aestimatus Primarius:20/50/100/200A/300A/400A

Tensio Egressus:Potentia Singularis 2.5+2V

Potestas Duplex:Duplex Potentia 0+4V

Tensio sustinenda insulationis:3KV/1min

Frequentia Operandi:50-60Hz

Temperatura Operandi:40°C ~ +85°C

Insulatio:Resina epoxydica inclusa

Involucrum Externum:PBT Ignifugum Retardans

Applicatio:Instrumenta electrica frequentiae variabilis, inverter, impulsor celeritatis variabilis AC/DC, Fontes potentiae modi commutati (SMPS), Fontes potentiae sine interruptione (UPS)

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Detalia Producti

Etiquettae Productarum

Descriptio

Nomen Producti	Sensorium Currentis Effectus Hall Transductor Nuclei Divisi
P/N	MLRH-2147
Currentis Aestimata Primaria	20/50/100/200A/300A/400A
Tensio Egressus	Potentia Singularis 2.5±2V
Duplex Potestas	Duplex Potentia 0±4V
Tensio sustinenda insulationis	3KV/1min
Frequentia Operandi	50-60Hz
Temperatura Operativa	-40℃ ~ +85℃
Insulatio	Resina epoxydica inclusa
Involucrum Externum	PBT Ignifugum Retardans
Aapplicatio	Instrumenta electrica frequentiae variabilis, inversor, impulsor celeritatis variabilis AC/DC Fontes Potentiae Commutati Modi (SMPS), Fontes Potentiae Ininterruptibiles (UPS),

Proprietates

Facilis installatio

Structura fenestrae

Parva energiae consumptio, optima linearitas

Unum tantum consilium pro lata amplitudine aestimationum currentium

Alta immunitas ad perturbationes externas

Nullae iacturae insertionis

Sensorium Duplicis Potentiae Hall Currentis

Electrical data (Ta=25ºC±5ºC)

Input aestimatum	I_PN	20/50/100	A
Spatium mensurae	I_P	±30/±75/±150	A
Tensio egressa	V_o	±4.0*(I_P/I_PN)	V
Resistentia oneris	R_L	>10	KΩ
Tensio alimentationis	V_C	(±12 ~±15) ±5%	V
Accuratio	X_G	@IPN,T=25°C < ±1.0	%
Tensio offset	V_OE	@IP=0,T=25°C < ±25	mV
Variatio temperaturae V_OE	V_OT	@IP=0,-40 ~ +85°C < ±1.0/ < ±0.5/< ±0.5	mV/℃
Variatio temperaturae V_O	V_OS	@IP=IPN, -40 ~ +85°C < ±2.5	%
Tensio hysteresis offset	V_OH	@IP=0, post 1*IPN < ±25	mV
Error linearitatis	εr	< 1.0	%FS
di/dt		> 100	A/μs
Tempus responsionis	tra	@90% IPN < 5.0	μs
Consumptio energiae	IC	@+15V <23	mA
Consumptio energiae	IC	@-15V <4.5	mA
Latitudo frequentiae	BW	@-3dB, IPN DC-20	KHZ
Tensio insulationis	V_d	@50/60Hz, 1 min, AC, 1.5mA 4.0	KV

Data electrica Typi Anuli: (Ta = 25°C, Vc = +12.0VDC, RL = 2KΩ)

Parametrum		MLRH-50A/2V	MLRH-100A/2V	MLRH-200A/2V	MLRH-300A/2V	MLRH-400A/2V	Unitas
Input aestimatum	I_PN	50	centum	ducenti	trecenti	quadringenti	A
Spatium mensurae	I_P	0~±50	0~±100	0~±200	0~±300	0~±400	A
Tensio egressa	Vo			2.500±2.0*(I_P/I_PN)			V
Tensio egressa	Vo	@IP=0,T=25°C		2.500			V
Resistentia oneris	R_L			>2			KΩ
Tensio alimentationis	V_C			+12.0 ±5%			V
Accuratio	X_G	@I_PNTemperatura = 25°C		< ±1.0			%
Tensio offset	V_OE	@I_P= 0, T = 25°C		< ±25			mV
Variatio temperaturae V_OE	V_OT	@I_P=0,-40 ~ +85°C		< ±1.0			mV/℃
Tensio hysteresis offset	V_OH	@IP=0, post 1*IPN		< ±20			mV
Error linearitatis	εr			< 1.0			%FS
di/dt				> 100			A/µs
Tempus responsionis	tra	@90% IPN		< 3.0			µs
Consumptio energiae	I_C			15			mA
Latitudo frequentiae	BW	@-3dB, IPN		DC-20			KHZ
Tensio insulationis	Vd	@50/60Hz, 1min, AC		2.5			KV

Data generalia:

Parameter	Symbol	Value	Unit
Temperatura operandi	T_A	-40 ~ +85	°C
Temperatura repositionis	Ts	-55~ +125	°C
Pondus	m	70	g
Materia plastica	PBT G30/G15, UL94-V0;
Normae	IEC60950-1:2001
	EN50178:1998
	SJ20790-2000

Dimensiones (mm):

Adnotationes:

1, Cum fluxus electricus per clavum primarium sensoris transit, tensio electrica in extremo egressus metietur. (Nota: Filatio falsa damnum sensori inferre potest).

2, Designatio consuetudinaria in diversis currentibus aestimatis ingressus et tensionibus output praesto est.

3, Optima est dynamica efficacia cum foramen primarium plene impletum est;

4, conductor primarius debet esse <100°C;

Data electrica Typi Rectangularis: (Ta = 25°C, Vc = +12.0VDC, RL = 2KΩ)

Parametrum		MLRH-200A/2V	MLRH4-600A/2V	MLRH4-800A/2V	MLRH4-1000A/2V	MLRH4-1200A/2V	MLRH4-2000A/2V	Unitas
Input aestimatum	IPN	ducenti	DC	DCCC	mille	1200	MM	A
Spatium mensurae	IP	0~±200	0~±600	0~±800	0~±1000	0~±1200	0~±2000	A
Tensio egressa	Vo			2.500±2.0*(IP/IPN)				V
Tensio egressa	Vo	@IP=0,T=25°C		2.500				V
Resistentia oneris	RL			>2				KΩ
Tensio alimentationis	VC			+12.0±5%				V
Accuratio	XG	@IPN,T=25°C		< ±1.0				%
Tensio offset	VOE	@IP=0,T=25°C		< ±25				mV
Variatio temperaturae VOE	SUFFRAGIA	@IP=0,-40 ~ +85°C		< ±1.0				mV/℃
Tensio hysteresis offset	VOH	@IP=0, post 1*IPN		< ±20				mV
Error linearitatis	εr			< 1.0				%FS
di/dt				> 100				A/µs
Tempus responsionis	tra	@90% IPN		< 7.0				µs
Consumptio energiae	IC			15				mA
Latitudo frequentiae	BW	@-3dB, IPN		DC-20				KHZ
Tensio insulationis	Vd	@50/60Hz, 1min, AC		6.0				KV

Data generalia:

Parameter	Symbol	Value	Unit
Temperatura operandi	TA	-40 ~ +85	°C
Temperatura repositionis	Ts	-55~ +125	°C
Pondus	m	ducenti	g
Materia plastica	PBT G30/G15, UL94-V0;
Normae	IEC60950-1:2001
	EN50178:1998
	SJ20790-2000