Bottom price 150a 4v Hall Effect Current Transformer - Hall Effect Current Sensor Split Core Transducer – Malio

Inquire Now Next Product

Product Detail

Product Tags

Feedback (2)

We stick to the principle of "quality first, service first, continuous improvement and innovation to meet the customers" for the management and "zero defect, zero complaints" as the quality objective. To perfect our service, we provide the products with the good quality at the reasonable price for High Frequency Nanocrystalline C Core, Nanocrystalline Amorphous Core, Toroidal Nanocrystalline Core, Honesty is our principle, skilled procedure is our perform, service is our target, and customers' satisfaction is our long term!

Bottom price 150a 4v Hall Effect Current Transformer - Hall Effect Current Sensor Split Core Transducer – Malio Detail:

Description

Product Name	Hall Effect Current Sensor Split Core Transducer
P/N	MLRH-2147
Primary Rated Current	20/50/100/200A/300A/400A
Output Voltage	Single Power 2.5±2V
Dual Power	Dual Power 0±4V
Insulation withstand voltage	3KV/1min
Operating Frequency	50-60Hz
Operating Temperature	-40℃ ~ +85℃
Insulation	Epoxy resin encapsulated
Outer Case	Flame Retardant PBT
Application	Variable frequency electrical appliances， inverter， AC/DC variable-speed driveSwitched Mode Power Supplies (SMPS)， Uninterruptible Power Supplies (UPS)，

Features

Easy installation

Window structure

Low power consumption， very good linearity

Only one design for wide current ratings range

High immunity to external interference

No insertion losses

Dual Power Hall Current Sensor

Electrical data (Ta=25ºC±5ºC)

Rated input	I_PN	20/50/100	A
Measuring range	I_P	±30/±75/±150	A
Output voltage	V_o	±4.0*(I_P/I_PN)	V
Load resistance	R_L	>10	KΩ
Supply voltage	V_C	（±12 ～±15） ±5%	V
Accuracy	X_G	@IPN,T=25°C < ±1.0	%
Offset voltage	V_OE	@IP=0,T=25°C < ±25	mV
Temperature variation of V_OE	V_OT	@IP=0,-40 ~ +85°C < ±1.0/< ±0.5/< ±0.5	mV/℃
Temperature variation of V_O	V_OS	@IP=IPN,-40 ~ +85°C < ±2.5	%
Hysteresis offset voltage	V_OH	@IP=0,after 1*IPN < ±25	mV
Linearity error	εr	< 1.0	%FS
di/dt		> 100	A/μs
Response time	tra	@90% of IPN < 5.0	μs
Power consumption	IC	@+15V <23	mA
Power consumption	IC	@-15V <4.5	mA
Bandwidth	BW	@-3dB,IPN DC-20	KHZ
Insulation voltage	V_d	@50/60Hz, 1min,AC ,1.5mA 4.0	KV

Ring Type Electrical data：（Ta=25°C，Vc=+12.0VDC,RL=2KΩ）

Parameter		MLRH-50A/2V	MLRH-100A/2V	MLRH-200A/2V	MLRH-300A/2V	MLRH-400A/2V	Unit
Rated input	I_PN	50	100	200	300	400	A
Measuring range	I_P	0～±50	0～±100	0～±200	0～±300	0～±400	A
Output voltage	Vo			2.500±2.0*(I_P/I_PN)			V
Output voltage	Vo	@IP=0,T=25°C		2.500			V
Load resistance	R_L			>2			KΩ
Supply voltage	V_C			+12.0 ±5%			V
Accuracy	X_G	@I_PN,T=25°C		< ±1.0			%
Offset voltage	V_OE	@I_P=0,T=25°C		< ±25			mV
Temperature variation of V_OE	V_OT	@I_P=0,-40 ~ +85°C		< ±1.0			mV/℃
Hysteresis offset voltage	V_OH	@IP=0,after 1*IPN		< ±20			mV
Linearity error	εr			< 1.0			%FS
di/dt				> 100			A/µs
Response time	tra	@90% of IPN		< 3.0			µs
Power consumption	I_C			15			mA
Bandwidth	BW	@-3dB,IPN		DC-20			KHZ
Insulation voltage	Vd	@50/60Hz, 1min,AC		2.5			KV

General data：

参数 Parameter	符号Symbol	数值Value	单位Unit
Operating temperature	T_A	-40 ~ +85	°C
Storage temperature	Ts	-55~ +125	°C
Weight	m	70	g
Plastic material	PBT G30/G15，UL94- V0;
Standards	IEC60950-1:2001
	EN50178:1998
	SJ20790-2000

Dimensions (mm):

Remarks：

1,When the current will be measured goes through the primary pin of a sensor, the voltage will beMeasured at the output end. (Note: The false wiring may result in the damage the sensor).

2,Custom design in the different rated input current and the output voltage are available.

3,The dynamic performance is the best when the primary hole if fully filled with;

4, The primary conductor should be <100°C;

Rectangular Type Electrical data：（Ta=25°C，Vc=+12.0VDC,RL=2KΩ）

Parameter		MLRH-200A/2V	MLRH 4-600A/2V	MLRH 4-800A/2V	MLRH 4-1000A/2V	MLRH 4-1200A/2V	MLRH 4-2000A/2V	Unit
Rated input	IPN	200	600	800	1000	1200	2000	A
Measuring range	IP	0～±200	0～±600	0～±800	0～±1000	0～±1200	0～±2000	A
Output voltage	Vo			2.500±2.0*(IP/IPN)				V
Output voltage	Vo	@IP=0,T=25°C		2.500				V
Load resistance	RL			>2				KΩ
Supply voltage	VC			+12.0±5%				V
Accuracy	XG	@IPN,T=25°C		< ±1.0				%
Offset voltage	VOE	@IP=0,T=25°C		< ±25				mV
Temperature variation of VOE	VOT	@IP=0,-40 ~ +85°C		< ±1.0				mV/℃
Hysteresis offset voltage	VOH	@IP=0,after 1*IPN		< ±20				mV
Linearity error	εr			< 1.0				%FS
di/dt				> 100				A/µs
Response time	tra	@90% of IPN		< 7.0				µs
Power consumption	IC			15				mA
Bandwidth	BW	@-3dB,IPN		DC-20				KHZ
Insulation voltage	Vd	@50/60Hz, 1min,AC		6.0				KV

General data：

参数 Parameter	符号Symbol	数值Value	单位Unit
Operating temperature	TA	-40 ~ +85	°C
Storage temperature	Ts	-55~ +125	°C
Weight	m	200	g
Plastic material	PBT G30/G15，UL94- V0;
Standards	IEC60950-1:2001
	EN50178:1998
	SJ20790-2000

Dimensions (mm):

111

Remarks：

1, When the current will be measured goes through the primary pin of a sensor, the voltage will be

Measured at the output end.(Note: The false wiring may result in the damage the sensor).

2, Custom design in the different rated input current and the output voltage are available.

3, The dynamic performance is the best when the primary hole if fully filled with;

4, The primary conductor should be <100°C;

Product detail pictures:

Related Product Guide:

No matter new customer or old customer, We believe in long term and trusted relationship for Bottom price 150a 4v Hall Effect Current Transformer - Hall Effect Current Sensor Split Core Transducer – Malio , The product will supply to all over the world, such as: Saudi Arabia, Ottawa, Belgium, We have been committed to meet all your needs and solve any technical problems you may encounter with your industrial components. Our exceptional products and vast knowledge of technology makes us the preferred choice for our customers.

2021 High quality Micro Current Transformer -